Semiconductor CMP wafer polishing dedicated rotary joints

Semiconductor CMP wafer polishing dedicated rotary joints

Semiconductor CMP wafer polishing dedicated rotary head

Semiconductor CMP wafer polishing dedicated rotary joints

Semiconductor CMP wafer polishing dedicated rotary head

The CMP polishing head is the core component of the CMP machine polishing system, which mainly functions to adsorb wafers, apply pressure, drive rotation, and integrate endpoint detection. Its construction achieves precise control through the synergistic effect of vacuum suction cups, flexible films, and fixed rings, and optimizes polishing effects by adjusting parameters such as back pressure, downforce, and rotation speed. The wafer adsorption polishing head uses vacuum adsorption or mechanical clamping to fix the wafer, ensuring stability and no movement during the polishing process. For example, the vacuum adsorption function firmly adheres the wafer to the surface of the polishing head through negative pressure, avoiding sliding or displacement, thereby ensuring surface flatness.
The working principle of CMP is to polish a wafer in an abrasive slurry while applying a small downward force. The wafer is loaded face down onto the wafer carrier. Then press the wafer carrier onto a rotating pad called a pressure plate. The pressure plate and wafer carrier are both rotating, and a liquid abrasive called slurry is dispensed onto the pressure plate by the applicator. When the wafer rotates in the carrier, its upper surface is slowly and finely polished. This makes the surface of the wafer smooth and flat. Rinse and clean the polished wafer to remove all slurry.

1. Characteristics
1) Low leakage rate ensures that the equipment can adsorb workpieces for a long time;
2) Small size is beneficial for reducing the height of customer equipment;
3) Low starting torque, equipment starts smoothly;
4) Low heat generation, can be installed in enclosed spaces for a long time;
5) Modular design reduces customer procurement costs;
Long lifespan, using mechanical seals.

rotary joints

2. Technical indicators

 

medium vacuum nitrogen CDA
Pressure (Kpa) -95 150 150
Rated speed (rpm) 250 250 250
leakage rate All channels are available 150KPa@250rpm Leakage rate ≤ 0.35KPa/min
number of channels 1-12
Fluid diameter (mm) 3.2